TLP250 2002-09-25 1 toshiba photocoupler gaalas ired & photo ? ic TLP250 transistor inverter inverter for air conditionor i gate drive power mos fet gate drive the toshiba TLP250 consists of a gaalas light emitting diode and a integrated photodetector. this unit is 8 ? lead dip package. TLP250 is suitable for gate driving circuit of igbt or power mos fet. input threshold current: i f =5ma(max.) supply current (i cc ): 11 ma(max.) supply voltage (v cc ): 1 0 ? 35v output current (i o ): 1 .5a (max.) switching time (t plh /t phl ): 1 .5s(max.) isolation voltage: 2500v rms (min.) ul recognized: ul 1 577, file no.e67349 option (d4) type vde approved: din vde0884/06.92,certificate no.76823 maximum operating insulation voltage: 630v pk highest permissible over voltage: 4000v pk (note) when a vde0884 approved type is needed, please designate the "option (d4)" creepage distance: 6.4mm(min.) clearance: 6.4mm(min.) schmatic pin configuration (top view) 8 7 6 5 1 : n.c. 2 : anode 3 : cathode 4 : n.c. 5 : gnd 6 : v o (output) 7 : v o 8 : v cc 1 2 3 4 2+ v f i f 3- i cc (t r 1) v o gnd (t r 2) i o v o v cc 8 7 6 5 a 0.1f bypass capcitor must be connected between pin 8 and 5 (see note 5). truth table tr1 tr2 on on off input led off off on unit in mm toshiba 11 ? 10c4 weight: 0.54 g
TLP250 2002-09-25 2 absolute maximum ratings (ta = 25c) characteristic symbol rating unit forward current i f 20 ma forward current derating (ta 70c) ? i f / ? ta 0.36 ma / c peak transient forward curent (note 1) i fpt 1 a reverse voltage v r 5 v led junction temperature tj 125 c ?h?peak output current (p w 2.5s,f 15khz) (note 2) i oph 1.5 a ?l?peak output current (p w 2.5s,f 15khz) (note 2) i opl +1.5 a (ta 70c) 35 output voltage (ta 85c) v o 24 v (ta 70c) 35 supply voltage (ta 85c) v cc 24 v output voltage derating (ta 70c) ? v o / ? ta 0.73 v / c supply voltage derating (ta 70c) ? v cc / ? ta 0.73 v / c detector junction temperature tj 125 c operating frequency (note 3) f 25 khz operating temperature range t opr 20~85 c storage temperature range t stg 55~125 c lead soldering temperature (10 s) t sol 260 c isolation voltage (ac, 1 min., r.h. 60%) (note 4) bv s 2500 vrms (note 1) pulse width p w 1s, 300pps (note 2) exporenential wavefom (note 3) exporenential wavefom, i oph 1.0a( 2.5s), i opl +1.0a( 2.5s) (note 4) device considerd a two terminal device: pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. (note 5) a ceramic capacitor(0.1f) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. failure to provide the bypassing may impair the switching proparty. the total lead length between capacitor and coupler should not exceed 1cm. recommended operating conditions characteristic symbol min. typ. max. unit input current, on i f(on) 7 8 10 ma input voltage, off v f(off) 0 D 0.8 v supply voltage v cc 15 D 30 20 v peak output current i oph /i opl D D 0.5 a operating temperature t opr 20 25 70 85 c
TLP250 2002-09-25 3 electrical characteristics (ta = 20~70c, unless otherwise specified) characteristic symbol test cir cuit test condition min. typ.* max. unit input forward voltage v f D i f 10 ma , ta = 25c 1.6 1.8 v temperature coefficient of forward voltage ? v f / ? ta D i f 10 ma D 2.0 D mv / c input reverse current i r D v r = 5v, ta = 25c D 10 a input capacitance c t D v = 0 , f = 1mhz , ta = 25c D 45 250 pf ?h? level i oph 3 i f 10 ma v 8 6 4v 0.5 1.5 D output current ?l? level i opl 2 v cc = 30v (*1) i f 0 v 6 5 2.5v 0.5 2 D a ?h? level v oh 4 v cc1 = +15v, v ee1 = 15v r l = 200 ? , i f = 5ma 11 12.8 D output voltage ?l? level v ol 5 v cc1 = +15v, v ee1 = 15v r l = 200 ? , v f = 0.8v D 14.2 12.5 v v cc = 30v, i f = 10ma ta = 25c D 7 D ?h? level i cch D v cc = 30v, i f = 10ma D D 11 v cc = 30v, i f = 0ma ta = 25c 7.5 supply current ?l? level i ccl D v cc = 30v, i f = 0ma D D 11 ma threshold input current ?output l h? i flh D v cc1 = +15v, v ee1 = 15v r l = 200 ? , v o > 0v D 1.2 5 ma threshold input voltage ?output h l? i fhl D v cc1 = +15v, v ee1 = 15v r l = 200 ? , v o < 0v 0.8 D D v supply voltage v cc D 10 D 35 v capacitance (input output) c s D v s = 0 , f = 1mhz ta = 25 D 1.0 2.0 pf resistance(input output) r s D v s = 500v , ta = 25c r.h. 60% 110 12 10 14 D * all typical values are at ta = 25c (*1): duration of i o time 50s
TLP250 2002-09-25 4 switching characteristics (ta = 20~70c , unless otherwise specified) characteristic symbol test cir cuit test condition min. typ.* max. unit l h t plh D 0.15 0.5 propagation delay time h l t phl D 0.15 0.5 output rise time t r D D D output fall time t f 6 i f = 8ma v cc1 = +15v, v ee1 = 15v r l = 200 ? D D D s common mode transient immunity at high level output c mh 7 v cm = 600v, i f = 8ma v cc = 30v, ta = 25c 5000 D D v / s common mode transient immunity at low level output c ml 7 v cm = 600v, i f = 0ma v cc = 30v, ta = 25c 5000 D D v / s * all typical values are at ta = 25c
TLP250 2002-09-25 5 test circuit 1 : test circuit 2 : iopl test circuit 3 : ioph test circuit 4 : voh test circuit 5 : v ol 8 1 4 v cc 0.1f i opl a v 6-5 8 1 4 v cc1 0.1f v ol v f r l v ee1 v 5 1 4 8 8 1 4 v cc 0.1f i oph v 8-6 i f 8 1 4 v cc1 0.1f v oh v i f r l v ee1 a
TLP250 2002-09-25 6 test circuit 6: t plh , t phl , t r t f test circuit 7: c mh , c ml c ml (c mh ) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state. v ee1 v cc1 v o r l 0.1f 8 i f 100 ? v o i f v o v oh gnd v ol 80% 80% t p lh t p hl t r t f v cm 90% v o 600v c mh c hl 10% t r t f 26v 3v sw :a(i f =8ma) sw :b(i f =0) 0.1f 8 v cc v o 1 4 v cm + - a b sw i f c ml = c mh = 480 (v) t r ( s ) t f ( s ) 480 (v)
TLP250 2002-09-25 7 i f ? v f forward voltage v f (v) forward current i f (ma) 100 1.0 50 30 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 1.2 1.4 1.6 1.8 2.0 ta = 2 5 c i f ? ta ambient temperature ta (c) allowable forward current i f (ma) 40 0 0 100 20 40 60 80 10 20 30 v cc ? ta ambient temperature ta (c) allowable supply voltage v cc (v) 40 0 0 100 20 40 60 80 10 20 30 i oph, i opl ? ta ambient temperature ta (c) allowable peak output current i oph, i opl (a) 0 0 100 20 40 60 80 1 2 pw Q 2.5 s, f Q 15 khz v f / ta ? i f forward current i f (ma) forward voltage temperature coefficient v f / ta (mv / c) -1.4 0.1 0.3 0.5 1 3 5 10 30 -1.6 -1.8 -2.0 -2.2 -2.4 -2.6
TLP250 2002-09-25 8 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. gallium arsenide (gaas) is a substance used in the products described in this document. gaas dust and fumes are toxic. do not break, cut or pulverize the product, or use chemicals to dissolve them. when disposing of the products, follow the appropriate regulations. do not dispose of the products with other industrial waste or with domestic garbage. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ebc restrictions on product use
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